This work reports one low-priced ways for production of CuFeS₂ films on conductive glass surface. CuFeS₂ films were prepared by electrodeposition and post-sulfurization treatment at 220 ^oC for 30 h in N₂ atmosphere for the first time. CuFeS₂ films were prepared by electrodeposition with sulfate, ascorbic acid, complexing agent sodium citrate as raw materials. When the deposition potential is -1.0 V and the deposition time is 20 min, CuFeS₂ thin films with good phrase formation can be obtained at pH 4 and 0.02M Na₂S₂O₃·H₂O. The phase of samples were characterized using X-ray diffraction (XRD). The morphology of samples were characterized via scanning electron microscopy (SEM). The composition of samples were characterized by energy dispersive spectrometer (EDS). The crystallinity of CuFeS₂ thin films prepared under these conditions are relatively good. The microcosmic morphology of the samples is flaky crystal. It is shows that post-sulfurization method is helpful for the phase formation of CuFeS₂ films electrodeposited.

Keywords: CuFeS₂, Thin film, Photoelectric, Electrodeposition, Solar energy