Articles
  • Effect of gas condition on graphene synthesized by rapid thermal chemical vapor deposition

  • Yang Soo Leea,†, Dong In Jeonga,†, Yeojoon Yoonb,†, Byeongmin Baekc, Hyung Wook Choid, Seok Bin Kwona, Do Hun Kimc, Young Joon Honge, Won Kyu Parkf, Young Hyun Songg, Bong Kyun Kangc, Dae Ho Yoona,* and Woo Seok Yangc,*

  • aSchool of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea
    bDepartment of Environmental Engineering, Yonsei University, Wonju-si, Gangwon-do, Republic of Korea
    cNano Materials and Components Research Center, Korea Electronics Technology Institute, Seongnam-si, Gyeonggi-do 13509, Republic of Korea
    dSKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea
    eDepartment of Nanotechnology and Advanced Material Engineering, Sejong University, Seoul 05006, Republic of Korea
    fNano Material Division, Cheorwon Plasma Research Institute, Cheorwon, Gangwon, 24047, Republic of Korea
    gLighting Design & Component Research Center, Korea Photonics Technology Institute, Gwangju 61007, Republic of Korea

Abstract

Graphene was synthesized using rapid thermal chemical vapor deposition (RT-CVD) equipment designed to produce large-area graphene at high speed. The effects of methane (CH4), argon (Ar), and hydrogen (H2) gases were investigated between 800 oC and 1,000 oC during heating and cooling in the graphene synthesis process. The findings reveal that multilayer domains increased due to hydrogen pretreatment with increase in temperature. Furthermore, when pretreated with the same gas, it was confirmed that the post-argon-treated sample cooled from 1,000 oC to 800 oC had a higher ID/IG value than that of the other samples. This result was consistent with the sheet resistance properties of graphene. The sample prepared in methane atmosphere maintained during both the pre-treatment and post-treatment demonstrated the lowest sheet resistance of 787.49 Ω/sq. Maintaining the methane gas atmosphere in the high-temperature region during graphene synthesis by RT-CVD reduced the defects and improved the electrical property.


Keywords: Graphene, Rapid thermal chemical vapor deposition, Gas condition

This Article

  • 2020; 21(S1): 47-52

    Published on May 31, 2020

  • 10.36410/jcpr.2020.21.S1.s47
  • Received on Dec 16, 2019
  • Revised on Apr 21, 2020
  • Accepted on May 4, 2020

Correspondence to

  • Dae Ho Yoon a and Woo Seok Yang c

  • aSchool of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea
    cNano Materials and Components Research Center, Korea Electronics Technology Institute, Seongnam-si, Gyeonggi-do 13509, Republic of Korea
    Tel./Fax: +82-31-290-7388 (D. Yoon), +82-31-789-7057 (W. Yang)
    E

  • E-mail: dhyoon@skku.edu, wsyang@keti.re.kr