The enhanced optical output power of AlGaN/GaN deep ultraviolet light-emitting diodes (UV LEDs) were demonstrated by using the breakdown-induced conductive channels (BICCs). The BICCs could be made by electrical reverse biasing between two adjacent contact pads formed on top p-type layers with a certain distance, causing an electrical breakdown of pn junction and hence a generation of conductive channels. Accordingly, the reflective Ni/Ag/Pt electrodes could be formed simultaneously on the top p-type layer and the other p-type layer with the BICCs, acting as the p- and n-contacts, respectively. The deep UV LEDs fabricated with the BICCs produced the enhanced optical output power by 15% as compared to the reference LEDs, which were fabricated with the conventional Ti/Al/Ti/Au layers formed on mesa-etched n-type layer. This could be due to the reduced light absorption at the n-contact pads, indicating that the use of BICCs will be very suitable for obtaining better output performance of deep UV emitters.

Keywords: Ultraviolet, Light emitting diodes, Breakdown-induced conductive channels, AlGaN/GaN