Articles
  • MIT characteristic of VO2 thin film deposited by ALD using vanadium oxytriisopropoxide precursor and H2O reactant

  • Changhee Shina, Namgue Leea, Hyeongsu Choib, Hyunwoo Parkb, Chanwon Jungb, Seokhwi Songb, Hyunwoo Yukb, Youngjoon Kimb, Jong-Woo Kimb, Keunsik Kimb, Youngtae Choib, Hyungtak Seoc,*, and Hyeongtag Jeona,b,*

  • aDivision of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, Korea
    bDivision of Materials Science and Engineering, Hanyang University, Seoul, Korea
    cDepartment of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon, Korea

Abstract

VO2 is an attractive candidate as a transition metal oxide switching material as a selection device for reduction of sneak-path current. We demonstrate deposition of nanoscale VO2 thin films via thermal atomic layer deposition (ALD) with H2O reactant. Using this method, we demonstrate VO2 thin films with high-quality characteristics, including crystallinity, reproducibility using X-ray diffraction, and X-ray photoelectron spectroscopy measurement. We also present a method that can increase uniformity and thin film quality by splitting the pulse cycle into two using scanning electron microscope measurement. We demonstrate an ON / OFF ratio of about 40, which is caused by metal insulator transition (MIT) of VO2 thin film. ALD-deposited VO2 films with high film uniformity can be applied to next-generation nonvolatile memory devices with high density due to their metal-insulator transition characteristic with high current density, fast switching speed, and high ON / OFF ratio.


Keywords: Atomic layer deposition, Vanadium dioxide, Metal insulator transition, Sneak-path current, Selection device

This Article

  • 2019; 20(5): 484-489

    Published on Oct 31, 2019

  • 10.36410/jcpr.2019.20.5.484
  • Received on Jun 9, 2019
  • Revised on Aug 6, 2019
  • Accepted on Aug 14, 2019

Correspondence to

  • Hyungtak Seo c , Hyeongtag Jeon a,b

  • aDivision of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, Korea
    bDivision of Materials Science and Engineering, Hanyang University, Seoul, Korea
    cDepartment of Materials Science and Engineering and Department of Energy Systems Research, Ajou University, Suwon, Korea
    Tel : +82-31-219-3532 (H. Seo), +82-22220-0387 (H. Jeon)
    Fax: +82-31-219-1613 (H. Seo),+82-2-2292-3523 (H. Jeon)

  • E-mail: hseo@ajou.ac.kr , hjeon@hanyang.ac.kr