Inverted staggered thin film transistors (TFTs) using magnesium zinc oxide (MgZnO) material as a channel layer have been fabricated over the glass substrate. A radio frequency magnetron sputtering technique was used to deposit thin films at a very low temperature of 100 oC. The structural and electrical characteristics were investigated. The semiconductor film shows slightly enhanced grain size without any crack with few grain boundaries. For the first time the self heating effect on the TFT fabricated using MgZnO was discussed. The electrical characteristics of MgZnO based device exhibit reduced self-heating effect compared with undoped zinc oxide. The calculated parameters are carrier mobility 1.08 cm2/V-s, threshold voltage 15 V, leakage current 10−10 A and current ratio (on/off) 10−5. The low deposition and processing temperatures make MgZnOTFTs very promising for the flexible electronics.
Keywords: MgZnO, Transistor, Self-heating, Sputtering, Characteristics