Articles
  • SEM/EDX, UV-Vis-NIR spectroscopy and refractive index studies of zinc oxide thin films
  • F.K. Konana,b,*, A. Betiéd,e, H.J.T. Nkuissib,c, K. Dakshib, B. Akaa and B. Hartitib
  • a Laboratoire d'Energie Solaire et de Nanotechnologie (LESN)-IREN (Institut de Recherches sur les Energies Nouvelles), Université Nangui Abrogoua, 02 BP 801 Abidjan, Côte d'Ivoire b MAC&PM Laboratory, ANEPMAER Group, Faculty of Science and Technique, Hassan II University of Casablanca, Mohammedia, Morocco c Department of Physics, Faculty of Science, University of Yaoundé I, P.O Box 812, Yaoundé, Cameroon d Laboratoire d'Instrumentation, Image et de Spectroscopie (L2IS), INPHB, DFR-GEE, B.P 1093 Yamoussoukro, Côte d'Ivoire e Canada Research Chair on Insulating Liquids and Mixed Dielectrics for Electrotechnology (ISOLIME), Université du Québec à Chicoutimi, Québec, Canada
Abstract
We used sol-gel via spin-coating technique to prepare zinc oxide (ZnO) thin films on glass substrates under three different conditions. SEM/EDX and UV-Vis-NIR spectroscopy characterizations were used to analyze the as-grown samples. The surface of all the films is homogeneous, has regular elongated grains and the thin films prepared consist of zinc and oxygen elements. In the wavelength region 200-800 nm, all the samples show high transparency (> 90%). The optical band gap values of the three corresponding ZnO layers were 3.2884, 3.3322 and 3.2985 eV respectively at 0.55 M, 0.75M and 0.95 M conditions and the refractive index values are ranging from 1.982 to 2.009. These properties obtained of the ZnO thin films prepared were examined depending on the precursor concentration conditions and are attractive for use in photovoltaic applications as a buffer layer in copper indium gallium di-selenide (Cu(In,Ga)Se2) solar cells.

Keywords: Spin-coating, ZnO, Band gap, Refractive index.

This Article

  • 2017; 18(12): 882-886

    Published on Dec 31, 2017

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