Zinc oxide (ZnO) channel layer transistors in inverted staggered type were fabricated by magnetron sputtering at different temperatures. The deposition condition of ZnO thin films were analyzed by a field-emission scanning electron microscope and X-ray diffraction measurement and the surface morphology of films were improved by the optimized sputtering parameters. The electrical characteristics of device showed the presence of self-heating effect. The self-heating effect was more pronounced by lowering the temperature due to the creation of more defects in the channel material. It act as traps for charge carrier and degrade the drain current of device which in turn alters the overall device parameters. Current-Voltage characteristics were measured and relevant transistor parameters were calculated and tabulated. The self-heating effect at different temperatures was compared.

Keywords: ZnO, Transistor, Sputtering, Film, Temperature.