This study systematically investigates the dependence of the optical and electrical properties as a function of top SnO2 thicknessof SnO2/Ag/Nb2O5/SiO2/SnO2 multi-layer films deposited on a glass substrate at room temperature. The results of an EMPsimulation suggested that a multilayered thin film consisting of SnO2 (45 nm)/Ag (10 nm)/Nb2O5 (10 nm)/SiO2 (10 nm)/SnO2(30 nm) exhibited a high transmittance of 88.8% at 550 nm while the experimentally-measured transmittance showed 85.3%,which was somewhat lower than what is shown with the simulation data. The lowest Rs and ρ value were of about 5.81 Ω/sqand 5.81 × 10−5 Ω • cm, and these were obtained with a multi-layered structure consisting of SnO2 (40 nm)/Ag (10 nm)/Nb2O5(10 nm)/SiO2 (10 nm)/SnO2 (30 nm). However, the sheet resistance and resistivity of the SnO2/Ag/ Nb2O5/SiO2/SnO2 multi layerfilm increased systematically with an increase in the thickness of the SnO2 layer from 40 to 55 nm. The ΦTC values of the SnO2/Ag/Nb2O5/SiO2/SnO2 multi layer films were shown to be in the range from 10.3 to 33.5 × 10−3 Ω−1.

Keywords: TMT structure, Transmittance, Sheet resistance, ΦTC