Articles - Defect reduction in m-plane GaN on m-sapphire via lateral epitaxial overgrowth by hydride vapor phase epitaxy
- Minho Kima, Seohwi Wooa, Byeongchan Soa, Kwang Bo Shimb and Okhyun Nama,*
- a Convergence Center for Advanced Nano Semiconductor (CANS), Department of Nano-Optical Engineering, Korea Polytechnic University (KPU),237, Sangidaehak-ro, Siheung-si, Gyeonggi-do, 429-793, Korea b Division of Materials Science and Engineering, Hanyang University, 17 Hangdang-dong Seongdong-gu, Seoul 133-791, Korea
Abstract
We report on the improvement of the structural and optical properties of m-plane GaN layers on m-plane sapphire viaepitaxial lateral overgrowth (ELO) using hydride vapor phase epitaxy. The planar m-plane GaN was compared to ELO mplaneGaN with stripes patterned along the [1120] and [0001], respectively. The ELO m-plane GaN samples showed narrowx-ray rocking curves and more improved cathodoluminescence (CL) images compared with those of the planar m-plane GaN. The density of threading dislocations (TDs) and basal-plane stacking faults (BSFs) was decreased in the ELO m-plane GaN,which was confirmed by transmission electron microscopy (TEM) and Williamson - Hall (W-H) plot analysis.
Keywords: HVPE, m-plane GaN, ELO, m-plane sapphire
This Article
Copyright 2019 International Orgranization for Ceramic Processing. All rights reserved.Clean-Energy Research Institute(CRI), Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea
E-mail: jcpr@hanyang.ac.kr