Articles - Effect of Zn dopant on the dielectric properties of (Ca0.8Sr0.2Ti0.8Zr0.2)O3 ceramics
- Hong-Ki Kima, Jin Hyeon Kima, Seung-Hwan Leeb, Hyeong Jong Choia and Young-Hie Leea,*
- a Dept. of Electronic Materials Engineering, Kwangwoon University b Center for Advanced Life Cycle Engineering, University of Maryland, Room 1103, Building 89, Colleage Park, MD 20742, USA
Abstract
Zn doped (Ca0.8Sr0.2Ti0.8Zr0.2)O3 (CSTZ) ceramics were fabricated using the conventional solid state reaction method. Dopant (Zn), which plays the role of acceptor, substitutes the B-site in the perovskite structure and generates oxygen vacancies due to the charge compensation. With increasing concentration of Zn, the grain size and relative density of doped CSTZ was increased because oxygen vacancies assist in the migration of ion during sintering. As a result, the dielectric constant increased and the dielectric loss decreased. When the concentration of Zn is 0.25 mol%, the dielectric constant and loss of Zn doped CSTZ at 1,000Hz are 199 and 0.076, respectively. Therefore, Zn doped CSTZ has the possibility of being used as a microwave capacitor.
Keywords: (Ca0.8Sr0.2Ti0.8Zr0.2)O3, Zn Doping, Charge compensation, Dielectric properties.
This Article
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