In this paper, we have studied the properties of SrTiO3 thin films which have been deposited on Si/Ti/Pt substrates using pulsed laser deposition technique. The as-deposited films were annealed at temperature of 700 oC in oxygen environment for 1 h. The surface morphology, crystalline phase and chemical composition of the films were characterized by AFM, XRD and XPS techniques, respectively. The XRD data show that phase transition from amorphous to polycrystalline structure happens and also the lattice constant enhances during annealing process. This enhancement can be related to oxygen vacancies in thin films. The XPS data show partial lack of titanium atoms on the surface. The AFM analysis indicates that the surface quality of the film is relatively good and the film shows a nanograin structure. Also, the change of leakage current of Si/Ti/Pt/STO/Pt capacitors with applied voltage has been investigated. The results show Schottky barrier for this capacitor.

Keywords: SrTiO3 thin films, Pulsed Laser Deposition (PLD), Electrical properties.