Articles
  • Recent Developments in Nano-Characterization of Materials 
  • R. Sinclair*, H. Li, J. Risner, U. Kwon, J.U. Huh, R.W. Chin and K.H. Min
  • Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Abstract
There have been many remarkable developments in characterization techniques in recent years. The relevance of some of the most important advances for nano-materials is discussed in this paper. Thus scanning electron microscopy (SEM) has a backscattered diffraction capability as well as improving (e.g. 1 nm) resolution. Focussed Ion Beam (FIB) instruments provide in-situ etching and deposition capability as well as ion and electron imaging. Transmission Electron Microscopy (TEM) is approaching 0.1 nm image resolution, and 0.5-1.0 nm chemical mapping through energy-filtered imaging. Surface analysis techniques can also now provide elemental distributions at ever improving scales: about 10 nm resolution for Auger Electron Spectroscopy (AES), 50 nm resolution for Secondary Ion Mass Spectrometry (SIMS) and 5-10 μm imaging for micro-X-ray Photoelectron Spectroscopy (XPS). Other techniques such as X-ray diffraction, optical and scanning probe microscopy would normally also be included in such a comprehensive, modern materials characterization facility.

Keywords: Characterization, electron microscopy, focussed ion beam, surface analysis, nano-materials

This Article

  • 2004; 5(1): 5-9

    Published on Mar 31, 2004

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