The effect of various electric field intensities on a Cu-field aided lateral crystallization (FALC) process of amorphous silicon (a-Si) films has been studied. The electric field intensity investigated in this study ranged from 15 V/cm to 180 V/cm. The intensity of the Raman spectral peak from the polycrystalline silicon (c-Si) increased monotonically with the electric field intensity during thermal annealing at a temperature of 450oC. The degree of crystallization calculated from the intensity of the Raman peak increased as well and resulted in 82% at the highest electric field of 180 V/cm. The crystallization velocity obtained from the sample at 180 V/cm was about 50 times larger than that from the sample at 15 V/cm. Consequently, it was verified that both the degree of crystallization and crystallization velocity depend strongly on the electric field intensities in FALC process.

Keywords: Cu catalyst, Field aided lateral crystallization (FALC), Electric field intensity, Degree of crystallization, Crystallization velocity