Articles
  • Measurement of Band Offsets in (Ce, Tb)MgAl11O19/InGaZnO4 Heterostructure System
  • Jong Cheon Parka, Kyeong-Won Kimb, Jae Woong Leeb, Brent P. Gilab, David P. Nortonb, Fan Renc, Stephen J. Peartonb, Ok Geun Jeonga, Tae Gyu Kimd, Jin Kon Kimd, and Hyun Chod,*
  • a Department of Nano Fusion Technology, Pusan National University, Miryang, Korea b Department of Materials Science and Engineering, University of Florida, Gainesville, USA c Department of Chemical Engineering, University of Florida, Gainesville, USA d Department of Nanomechatronics Engineering, Pusan National University, Miryang, Korea
Abstract
The energy discontinuity in the valence band (Delta E-V) and conduction band (Delta E-C) of (Ce, Tb)MgAl11O19 (CTMA)/InGaZnO4 (IGZO) heterostructure was obtained from X-ray photoelectron spectroscopy measurements. The CTMA exhibited a band gap of similar to 7.02 +/- 0.2 eV from absorption measurements. Determination of the band offsets using Ga 2p(3/2), Zn 2p(3/2) and In 3d(5/2) energy levels as references shows a valence band offset of similar to 0.55 eV. This implies a conduction band offset.E C of similar to 3.27 eV in CTMA/IGZO heterostructures and a nested interface alignment.

Keywords: Band offsets; (Ce,Tb)MgAl11O19/IGZO heterostructure; X-ray photoelectron spectroscopy; Valence band offset

This Article

  • 2014; 15(6): 545-548

    Published on Dec 31, 2014

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