Hg1-xCdxTe (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, a CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of 590°C for 15 minutes. When the thickness of the CdTe buffer layer was 5 μm or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111)/GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of x-ray rocking curves and photocurrent measurement. The photoconductor characterization of epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurements and the x composition rates from the temperature dependence of the energy band gap were turned out.

Keywords: Hg1-xCdxTe, Hot wall epitaxy, CdTe buffer layer, Photocurrent, Photoconductor