Articles
  • Thermoelectric properties of Sb-doped Mg2Si1-xSnx prepared by mechanical alloying and hot pressing 
  • Sin-Wook Youa, Il-Ho Kima*, Soon-Mok Choib and Won-Seon Seoc
  • a Department of Materials Science and Engineering, Korea National University of Transportation, Chungju, Chungbuk 380-702, Korea b School of Energy, Materials and Chemical Engineering, Korea University of Technology and Education, Cheonan, Chungnam 330-708, Korea c Energy and Environmental Materials Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Korea
Abstract
Sb-doped Mg2Si1-xSnx solid solutions were prepared by mechanical alloying and hot pressing. The electrical conduction behavior changed from n-type to p-type with increasing Sn content. The electrical conductivity increased with an increase in Sn content at specific temperatures. Sb-doped Mg2Si1-xSnx solid solutions showed n-type conduction, and the carrier concentration was increased by the doped Sb acting as donors. The absolute value of the Seebeck coefficient decreased with increasing temperature. The lowest thermal conductivity of 1.3W/mK was obtained by Sb doping. Mg2Si0.7Sn0.3 : Sb-0.01 exhibited a maximum ZT of 0.56 at 723 K.

Keywords: Thermoelectric; Mg-2(Si,Sn); Solid solution; Mechanical alloying

This Article

  • 2014; 15(6): 398-402

    Published on Dec 31, 2014

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