Transparent p-type gallium-doped tin oxide (GTO) thin films with 20 at% Ga doping were successfully prepared on fused silica glass substrates by RF magnetron sputtering. GTO films were deposited under different processing variables such as RF power from 125 to 175W, working pressures from 5 to 8 mtorr and annealing in pure oxygen ambient at various temperatures from 400 to 700 οC. The electrical properties determined by Hall effect measurements showed that the processing variables for GTO deposition played a strong influence on the conductivity type where it changed from n-type to p-type as variables adjusted.

Keywords: Gallium tin oxide (GTO), RF magnetron sputtering, P-type oxide semiconductor, Transparent conducting oxide (TCO)