Ti2AlN MAX-phase films were synthesized through the post-annealing process of as-deposited Ti-Al-N films. Near amorphous or quasi-crystalline ternary Ti-Al-N films were deposited on Si and Al2O3 substrates by sputtering a Ti2AlN MAX-phase target at room temperature, 300 οC and 450 οC, respectively. A vacuum annealing of those films at 800 οC for 1 hour changed those films to crystalline Ti2AlN MAX-phase. The polycrystalline Ti2AlN MAX-phase films exhibited very excellent oxidation resistance due to its characteristics microstructure (nanolaminates), which has potential applications for high-temperature protective coatings. The microstructure and composition of Ti2AlN MAX-phase films were investigated using with a variety of characterization tools.
Keywords: MAX-phase, Ti2AlN, Pulse DC magnetron sputtering, HRTEM, Oxidation behaviour