Articles - Characterization of GaN on GaN LED by HVPE method
- Se-Gyo Junga, Hunsoo Jeona, Gang Seok Leea, Seon Min Baea, Kyoung Hwa Kima, Sam Nyung Yia, Min Yanga, Hyung Soo Ahna,*, Young Moon Yub, Suck-Whan Kimc, Seong Hak Cheond, Hong Ju Had and Nobuhiko Sawakie
- a Department of Applied Sciences, Korea Maritime University, Busan 606-791, Korea b LED Marine Convergence Technology R&BD Center et Pukyung National University, Busan 608-737, Korea c Department of Physics, Andong National University, Andong 760-749, Korea dCSsol.Co., Ltd, Busan 619-961, Korea e Department of Electrical and Electronics Engineering, Aichi Institude of Technology, Aichi 470-0392, Japan
Abstract
The selective area growth light emitting diode on GaN substrate was grown using mixed-source HVPE method with multisliding boat system. The GaN substrate was grown using mixed-source HVPE system. Te-doped AlGaN/AlGaN/Mg-doped AlGaN/Mg-doped GaN multi-layers were grown on the GaN substrate. The appearance of epi-layers and the thickness of the DH was evaluated by SEM measurement. The DH metallization was performed by e-beam evaporator. n-type metal and ptype metal were evaporated Ti/Al and Ni/Au, respectively. At the I-V measurement, the turn-on voltage is 3 V and the differential resistance is 13 Ω. It was found that the SAG-LED grown on GaN substrate using mixed-source HVPE method with multi-sliding boat system could be applied for developing high quality LEDs.
Keywords: LED, Hydride vapor phase epitaxy, Selective area growth, Double heterostructure, GaN, III-V.
This Article
Copyright 2019 International Orgranization for Ceramic Processing. All rights reserved.Clean-Energy Research Institute(CRI), Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea
E-mail: jcpr@hanyang.ac.kr