Articles
  • Fabrication and characterization of Co, Al:ZnO thin films by a sol-gel spin coating technique for ferromagnetic applications
  • R. Siddheswarana,*, R.V. Mangalarajaa,*, Ricardo E. Avilab, Maria Elena Gómezc, D.Manikandana, Marta Lopeza, C. Esther Jeyanthid and S. Ananthakumare
  • a Advanced Ceramics and Nanotechnology Laboratory, Department of Materials Engineering, University of Concepcion, Concepcion, Chile b Personal Dosimetry Section, Chilean Commission of Nuclear Energy, Santiago, Chile c Department of Physics, University of Valle, Cali, Colombia d Research and Development Centre, Bharathiar University, Coimbatore - 641 046, India e Materials and Mineral Division, National Institute for Interdisciplinary Science and Technology, CSIR, Trivandrum-695019, Kerala, India
Abstract
Transparent polycrystalline ZnO and Co,Al co-doped ZnO [Zn1-x-yCoxAlyO; x = 0.03; y = 0.02] thin films were fabricated using sol-gel spin coating on glass substrates and subsequently annealed at 500 οC for 2 h in an ambient atmosphere. The decomposition of the precursors and formation of the metal oxide during annealing was explained by thermal analysis. X-ray crystal diffraction analysis on the co-doped ZnO thin films confirmed the formation of the hexagonal wurtzite structure. Microstructural studies revealed that the films were filled with particulates of sizes ranging between 40-50 nm and with a uniform film thickness of about 700 nm after annealing at 500 οC. Atomic force microscopy (AFM) images demonstrated a fine and smooth surface of the thin films. The spin coated films have also been shown to possess polycrystalline grains with a compact and void-free morphology. The energy dispersive X-ray spectroscopic (EDS) analysis confirmed the presence of Co, Al, Zn and O. The room temperature (300 K) ferromagnetic behavior of Co, Al co-doped ZnO thin films is also discussed.

Keywords: Co, Al: ZnO thin film, Spin coating, Morphology, Microstructure, Ferromagnetism.

This Article

  • 2012; 13(6): 801-805

    Published on Dec 31, 2012

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