Articles - Improvement of crystal quality and optical property in semi-polar (11-22) GaNbased light-emitting diodes grown on a SiNx interlayer
- Joocheol Jeong, Jongjin Jang, Jungwhan Hwang, Chilsung Jung, Jinwan Kim, Kyungjae Lee, Hyoungjin Lim and Okhyun Nam*
- LED Technology Center, Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 429-793, Korea
Abstract
The effect of semi-polar (11-22) GaN grown on SiNx interlayer InGaN/GaN double quantum wells (DQWs) light-emitting diodes (LEDs) was investigated. The X-ray rocking curves of both on-axis and off-axis planes were narrowed down and the photoluminescence intensity of the (11-22) GaN grown on the SiNx interlayer was increased compared to that of GaN without SiNx interlayer. The optical power of LEDs with a SiNx interlayer was increased by 200% and 330% at injection currents of 20 mA and 100 mA, respectively, in comparison to the reference LEDs.
Keywords: GaN, Light emitting diodes, Semi-polar, Optical property, SiNx.
This Article
Copyright 2019 International Orgranization for Ceramic Processing. All rights reserved.Clean-Energy Research Institute(CRI), Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea
E-mail: jcpr@hanyang.ac.kr