Articles
  • Magnetic and electrical properties of BFO/PZT heterolayered thin films
  • Seung-Hwan Leea, Sung-Pill Namb, Seon-Gi Baec and Young-Hie Leea,*
  • a Dept. of Electronics Materials Engineering, Kwangwoon University, Korea b Dept. of Smart Grid Research, Korea Electrotechnology Research Institute, Korea c Dept. of Electrical Engineering, University of Incheon, Korea
Abstract
BiFeO3/PZT(20/80) (hereafter BFO/PZT) heterolayered thin films were deposited by an RF sputtering method on Pt/TiO2/ SiO2/Si substrates. We investigated the effects of deposition conditions on the magnetic and electrical properties of BFO/PZT heterolayered thin films. The thickness of BFO/PZT heterolayered thin films is about 500 nm. All BFO/PZT films show a void free uniform grain structure without the presence of rosette structures. It can be assumed that the crystal growth of the upper BFO layers can be influenced by the lower PZT layers. This study suggests that the design of the BFO/PZT heterolayered thin films should be an effective method to enhance the magnetic and electrical performance in devices.

Keywords: BiFeO3/PZT(20/80), Thin films, RF sputtering method, Electrical properties

This Article

  • 2012; 13(2): 188-192

    Published on Apr 30, 2012

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