Articles
  • Enhanced field emission properties of indium-doped ZnO nanorods
  • M.N. Junga,g, J.E. Kooa, G.S. Kilb, S.H. Parkc, W.J. Leed, D.C. Ohe, H.J. Leef and J.H. Changa,*
  • a Department of Nano-semiconductor Engineering, National Korea Maritime Univ., Busan, 606-791, Korea b Division of Electrical and Electronics Engineering, National Korea Maritime Univ., Busan, 606-791, Korea　 c National Institute for Materials Science, Tsukuba, 305-0044, Japan d Electronic Ceramics Center, Dong Eui Univ., Busan, 614-714, Korea eDep. of Defense Science & Technology, Hoseo Univ., Asan, 336-795, Korea f Center for Interdisciplinary Research, Tohoku Univ., Sendai, 980-8578, Japan g Institute for Materials Research, Tohoku University, Sendai 980-8578, Japan
Abstract
Various group-III metal (Al, Ga, and In)-doped ZnO nanorods were synthesized by a vapor phase deposition in a horizontal reactor. The morphology and optical properties of the group-III metal doped nanorods were compared to determine the best candidate as a donor impurity. Among these three nanorod samples, indium-doped ZnO (ZnO : In) nanorods revealed the best result in terms of uniform morphology, strong luminescence intensity and negligible deep levels. The electrical properties of ZnO:In nanorods with various In-composition were indirectly assessed by Hall-effect measurements of the wetting layer. Also, we found that the ZnO : In nanorods show considerably improved field emission properties in compared to undoped ZnO nanorods with a low threshold electric field (Eth) of 4.32 V/μm at a current density of 0.1 μA/cm2 and a high field enhancement factor of 1258.

Keywords: Oxides, Vapor deposition, Electron microscopy, Electrical properties

This Article

  • 2012; 13(1): 1-4

    Published on Feb 28, 2012

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