Articles
  • Wet chemical surface modification of ITO by a self assembled monolayer for an organic thin film transistor
  • Seung Hyun Jee, Soo Ho Kim, Jae Hwan Ko, Dong-Joo Kima and Young Soo Yoon*
  • Department of Advanced Technology Fusion, Konkuk University, 1 Hwayang-dong, Gwangjin-gu, Seoul 143-701, Korea a Materials Research and Education Center, Dept. of Mechanical Engineering, Auburn University, 201 Ross Hall, AL 36849- 5341, USA
Abstract
Indium tin oxide (ITO), which is used as an electrode in organic thin film transistors (OTFT), was modified with a selfassembled monolayer (SAM) by wet chemical surface modification. The surface of the ITO was treated by a dipping method in a solution of 2-chloroethane phosphonic acid (2-CEPA) at room temperature. The work function in the ITO which was modified with the SAM in the 2-CEPA was 5.43 eV. The surface energy and a transmittance were unchanged within an error range. In this study, therefore, the possibility of ohmic contact is demonstrated in the interface between the ITO and the organic semiconductors. These results suggest that the treatment of the ITO with the SAM can greatly enhance the performance of an OTFT.

Keywords: Organic Thin Film Transistor (OTFT), Indium Tin Oxide (ITO), Work Function, Self Assembled Monolayer (SAM).

This Article

  • 2008; 9(1): 42-45

    Published on Feb 28, 2008