Articles
  • Anisotropic Pattern Transfer in GaN by Photo-Enhanced Wet Etching 
  • H. Cho*, S.C. Ryu, J.K. Kim, K.B. Shima, K.H. Auhb and S.J. Peartonc
  • Department of Materials Engineering, Miryang National University, Kyungnam 627-702, Korea a Department of Ceramic Engineering, Hanyang University, Seoul 133-791, Korea b Ceramic Processing Research Center, Hanyang University, Seoul 133-791, Korea c Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611, USA
Abstract
Anisotropic pattern transfer in GaN (undoped and n-type) has been performed by UV photo-enhanced wet etching in KOH, NaOH and AZ400K solutions and a comparison of these electrolytic solutions is presented. The etch mechanism was found to be diffusion-limited (Ea <6 kCal·mol−1) under all conditions whose other characteristics were a square-root dependence of etch rate on time, the production of relatively rough surfaces with a strong dependence of rate on solution agitation, whilst significantly faster etch rates were obtained with bias applied to the sample during light exposure.

Keywords: Photo-enhanced wet etching, GaN, UV illumination, etch mechanism, electrolytic solutions, diffusion-limited.

This Article

  • 2003; 4(3): 131-134

    Published on Sep 30, 2003