Articles - Group III-nitride radial heterojunction nanowire light emitters
- Michael A. Mastroa,*, Josh Caldwella, Mark Twigga, Blake Simpkinsa, Orest Glembockia, Ron T. Holma, Charles R. Eddy, Jr.a, Fritz Kuba, Hong-Yeol Kimb, Jaehui Ahnb and Jihyun Kimb,*
- a U.S. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, D.C. 20375, U.S.A. B Department of Chemical and Biological Engineering, Korea University, Sungbuk-gu, Seoul, Korea
Abstract
Heterojunction nanowires were fabricated via a vapor-liquid-solid growth mechanism in a metal organic chemical vapor deposition system. The structure consisted of a n-type GaN:Si core surrounding by a distinct p-type AlGaN:Mg shell. Transmission electron microscopy revealed that the nanowires were free of extended defects. Photoluminescence measured a strong UV emission peak. Additionally, sources of mid-gap transitions are linked to surface states on the nanowire surface.
Keywords: III-nitride, Nanowire, Defect.
This Article
Copyright 2019 International Orgranization for Ceramic Processing. All rights reserved.Clean-Energy Research Institute(CRI), Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea
E-mail: jcpr@hanyang.ac.kr