A hybrid structure of SnO2/Ag/SnO2/SiO2/Nb2O5 was deposited on soda lime glass substrate by sequential RF/DC magnetron sputtering at room temperature and its optical and electrical properties were systematically investigated as a function of top SnO2 thickness. EMP simulation results suggested that a multilayered film of SnO2 (40 nm)/Ag (10 nm)/SnO2 (30 nm)/SiO2 (10 nm)/Nb2O5 (10 nm) exhibited the highest visible transmittance of 90.1% at 550 nm, whereas experimentally measured transmittance showed 85.1%, somewhat lower than simulation data. The lowest R s and ρ value were about 3.21 Ω/sq and 3.21 × 10−5 Ω cm, acquired at the multi-layers with the structure of SnO2 (40 nm)/Ag (10 nm)/SnO2 (30 nm)/SiO2 (10 nm)/Nb2O5 (10 nm). In addition, the sheet resistance and resistivity of SnO2/Ag/SnO2/SiO2/Nb2O5 multi layer films increased systematically with increasing the thickness of SnO2 layer from 40 to 55 nm. It was shown that the ÖTC values of SnO2/Ag/SnO2/SiO2/Nb2O5 multi layer film were in the range of 46.4-62.1 × 10−3 Ω−1.

Keywords: TMT structure, Transmittance, Sheet resistance, ΦTC.