Rhombohedral In2O3 (rh-In2O3) thin films were synthesized by O2 plasma processed indium thin films prepared by RF sputtering. The as-prepared and processed thin films were characterized to know the influence of the plasma power, O2 gas flow rate and also process time on the surface morphology and electrical properties. SEM images showed the film quality as uniform, well adherent and completely free of pin-holes and creaks. All processed films showed indium clusters as islands over the surface. The resistivity of the as-prepared films was drastically decreased by the O2 plasma process. Plasma power and O2 flow rate influenced the change in resistivity of the rh-In2O3 thin films. I-V characteristics showed the conductivity behavior of rh-In2O3 thin film for various process conditions. The observed particle size of rh-In2O3 lie in between 75 and 105 nm and were confirmed by AFM analysis. A noticeable change in surface roughness was also confirmed with respect to plasma process conditions using AFM images

Keywords: rh-In2O3, Morphology, Surface roughness, Electrical resitivity.